張彥華 教授

1. 張彥華, 2020, Improving Off-State Breakdown Voltage of a Double-Channel AlGaN/GaN HEMT with Air-Bridge Field Plate and Slant Field Plate, Solid State Electronics Letters, Vol.2, pp.92-97. (其他)
2. 張彥華, 2014, Analysis of tunable transmission properties in photonic crystals containing doped semiconductor, Optics Communications, Vol.321, pp.167-171. (SCI)
3. 張彥華, 2013, Effect of Ta thickness on the perpendicular magnetic anisotropy in MgO/CoFeB/Ta/ [Co/Pd]n structures, Journal of Applied Physics, Vol.114, No.18, pp.184303. (SCI)
4. 張彥華, 2013, Perpendicular magnetic tunnel junctions with synthetic antiferromagnetic pinned layers based on [Co/Pd] multilayers, Journal of Applied Physics, Vol.113, No.17, pp.17B909. (SCI)
5. 張彥華, 2012, Electrical and Physical Properties of HfO2 as Gate Dielectrics Using Various Thickness of TaN Electrodes for MIS capacitors, Microelectronic Engineering, Vol.96, pp.61–66. (SCI)
6. 張彥華, 2012, A Collector Current Model for InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors with Non-ideal Effects, Microelectronics Reliability, Vol.52, No.7, pp.1328–1331. (SCI)
7. 張彥華, 2012, Temperature and bias dependences of defect mode in a photonic crystal containing a photonic-quantum-well defect, Journal of Optoelectronics and Advanced Materials, Vol.14, No.3, pp.185-192. (SCI)
8. 張彥華, 2012, Temperature dependence of defect mode in a defective photonic crystal, Optics Communications, Vol.285, No.6, pp.1501-1504. (SCI)
9. 張彥華, 2011, Improving an LDMOST by Variation of Lateral Doping on Epitaxial-Layer Drift Region, Microelectronics Reliability, Vol.51, No.12, pp.2059-2063. (SCI)
10. 張彥華, 2011, A Self-Consistent Extraction Procedure for Source/Drain Resistance in MOSFETs, Microelectronics Reliability, Vol.51, No.12, pp.2049-2052. (SCI)
11. 張彥華, 2011, DC parameter extraction of equivalent circuit model in InGaAsSb heterojunction bipolar transistors including non-ideal effects in the base region, Solid-State Electronics, Vol.61, No.1, pp.69-75. (SCI)
12. 張彥華, 2011, Tunable multilayer narrowband filter containing an ultrathin metallic film and a lithium niobate defect, Optical and Quantum Electronics, Vol.42, No.6-7, pp.359-365. (SCI)
13. 張彥華, 2011, Reflection and transmission in a heterostructured multilayer narrowband filter containing thin metallic films, Journal of Optoelectronics and Advanced Materials, Vol.13, No.3, pp.268-272. (SCI)
14. 張彥華, 2010, Use of Photonic Quantum Well as Tunable Defect in Multilayer, OPTICAL REVIEW, Vol.17, No.5, pp.495-498. (SCI)
15. 張彥華, 2010, Optimization of High Voltage LDMOSFETs with Complex Multiple-Resistivity Drift Region and Field Plate, Microelectronics Reliability, Vol.50, No.7, pp.949-953. (SCI, EI)
16. 張彥華, 2010, Extraction of VBIC Model Parameters for InGaAsSb DHBTs, Microelectronics Reliability, Vol.50, No.3, pp.370-375. (SCI, EI)
17. 張彥華, 2010, Extraction of bias-dependent parasitic source/drain resistance in MOSFETs with an advanced mobility model, Microelectronics Reliability, Vol.50, No.2, pp.174-178. (SCI, EI)
18. 張彥華, 2010, REFRACTOMETRIC OPTICAL SENSING BY USING A MULTILAYER REFLECTION AND TRANSMISSION NARROWBAND FILTER, Journal of Electromagnetic Waves and Applications (JEMWA), Vol.24, No.2/3, pp.293-305. (SCI)
19. 張彥華, 2010, Simulation of electrical characteristics of InP double-heterojunction bipolar transistors with InGaAsSb base, Microelectronics Reliability, Vol.50, No.1, pp.70-74. (SCI, EI)
20. 張彥華, 2009, Narrowband filter in a heterostructured multilayer containing ultrathin metallic films, Progress in Electromagnetics Research, Vol.96, pp.329-349. (SCI, EI)
21. 張彥華, 2009, Angular dependence of a narrowband reflection-and-transmission filter containing an ultrathin metallic film, Journal of the Optical Society of America, B, Vol.26, No.5, pp.1141-1145. (SCI, EI)
22. 張彥華, 2007, Perpendicular magnetic tunneling junction with double barrier layers for MRAM application, IEEE Transaction on Magnetics, Vol.43, No.2. (SCI, EI)
23. Yang-Hua Chang*, Hui-Feng Hsu, 2006, Determination of Thermal Resistance Using Gummel Measurement for InGaP/GaAs HBTs, Microelectronics Reliability, Vol.46, No.12, pp.2074-2078. (SCI, EI)
24. C.S. Ho*, Y.C. Lo, Yang-Hua Chang and Juin J. Liou, 2006, Determination of gate-bias dependent source/drain series resistance and effective channel length for advanced MOS devices, Solid State Electronics, Vol.50, No.11, pp.1774-1779. (SCI)
25. Yang-Hua Chang, Zhi-Juan Chang, and Yi-Jing Hsieh,, 2005, Substrate Leakage Current in InGaP/GaAs Heterojunction Bipolar Transistors, Japanese Journal of Applied Physics, Vol. 44, No. 4B, pp.2450-2453. (SCI)
26. Yang-Hua Chang, Chen-Chun Chang-Chiang, Yueh-Cheng Lee, and Chi-Chung Liu,, 2003, Design of Multi-finger HBTs with a Thermal-Electrical Model, Microelectronics Reliability, Vol. 43, No. 3, pp. 421-426. (SCI)
27. Yang-Hua Chang, 1994, Recombination Components of Base Current in AlGaAs/GaAs Heterojunction Bipolar Transistors, Journal of Yunlin Institute of Technology.
28. Yang-Hua Chang, 1994, Cascaded Collector Current formulations of Abrupt Heterojunction Bipolar Transistors and their Applications to Graded HBT, Solid-State Electronics. (SCI)
29. Yang-Hua Chang and G. P. Li, 1993, Resolving Degradation Mechanisms in Ultra-High Performance N-p-n Heterojunction Bipolar Transistors, IEEE Transactions on Electron Devices, Vol. 40, No. 4. (SCI)

1. 王焌至, 張彥華, 2019, Improving Off-State Breakdown Voltage for a Double-Channel AlGaN/GaN HEMT with Air-Bridge Field Plate and Slant Field Plate, The 2019 International Electron Devices & Materials Symposium, 2019/10/24-25, 台灣電子材料與元件協會、長庚大學, 新北市林口.
2. 張彥華, 黃懷諄, 2018, Increasing the Breakdown Voltage for AlGaN/GaN HEMTs with Slant and Conventional Gate Field Plates, International Electron Devices and Materials Symposium (IEDMS) 2018, 2018/11/14-16, 海洋大學, 基隆.
3. 張彥華, 鄭宇傑, 2018, Improving breakdown voltage of double-channel AlGaN/GaN HEMTs with double-gate and gate-field-plate structures, International Electron Devices and Materials Symposium (IEDMS) 2018, 2018/11/14-16, 海洋大學, 基隆.
4. 張彥華, 楊旅皓, 2017, Double-Channel E-Mode AlGaN/GaN HEMTs with an Electron-Blocking Layer Structure, The 13th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2017), 2017/10/18-20, 清華大學, 新竹.
5. 張彥華, 王建閔, 2017, Improving Breakdown Voltage of Double-Channel E-Mode AlGaN/GaN HEMTs Using a Double-Gate Structure, The 13th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2017), 2017/10/18-20, 清華大學, 新竹.
6. 張彥華, 王致乾, 2017, The Effects of Unintentional Doping Concentration and Polarization Charges on AlInN/GaN High Electron Mobility Transistors, International Electron Devices and Materials Symposium (IEDMS) 2017, 2017/09/06-08, 交通大學, 新竹.
7. 張彥華, 2014, Optimizing the Transconductance in AlGaN/GaN Double-Channel HEMTs, International Electron Devices and Materials Symposium (IEDMS), 2014/11/20-21, 東華大學, 花蓮. (102-1111)
8. 張彥華, 2013, Using a Composite Collector in InGaAs-based HBTs Containing Sb, International Electron Devices and Materials Symposium (IEDMS) 2013, 2013/11/28-29, 國立暨南大學, 南投縣埔里.
9. 張彥華, 2013, Simulation of Self-heating Effects on Heterojunction Bipolar Transistors, IEEE 2nd International Symposium on Next-Generation Electronics (ISNE), 2013/02/25-26, 義守大學, Kaohsiung, pp.383-385.
10. 張彥華, 2012, Electrical Characteristics of Zr/HfAlO High-K Gate Dielectric, International Electron Devices and Materials Symposium 2012, 2012/11/29-30, 義守大學, 高雄市，義守大學.
11. 張彥華, 2012, Electrical Characterization of Ultra Thin HfO2/Al2O3/HfO2 Triple-Layer Gate Dielectrics for Advanced MIS Capacitors, The 11th International Conference on Solid-State and Integrated-Circuit Technology, 2012/10/29-2012/11/01, 上海復旦大學, 西安, pp.S29_03.
12. 張彥華, 2011, A Physics-Based Collector Current Model for InGaAsSb Heterojunction Bipolar Transistors, 2011 International Electron Devices and Materials Symposia (IEDMS), 2011/11/17-18, 台灣科技大學, 台北市.
13. 張彥華, 2010, Extraction of Bias-Dependent Source and Drain Resistance for Compact Modeling in MOSFETs, International Electron Devices and Materials Symposium (IEDMS), 2010/11/18-19, 中央大學, 中壢.
14. 張彥華, 2010, A New Extraction Method for Source/Drain Resistance, International Conference on Solid-State and Integrated Circuit Technology, 2010/11/01-04, 上海復旦大學, 上海, P14_24.
15. 張彥華, 2009, TDDB Reliability of HfSiOx High-k Gate Dielectric with Post N2 RTA Treatment, 2009 IEDMS, 2009/11/19-20, 台灣電子材料與元件協會, 桃園長庚大學, pp.GC-18.
16. 張彥華, 2009, 不同緩衝層MgO 膜厚在退火條件下對水平式磁穿隧接面結構之影響, 2009第五屆台灣自旋電子學國際學術研討會, 2009/09/09-11, 國立雲林科技大學、國立中正大學、國立彰化師範大學、國立師範大學, 台中僑光科技大學, pp.C-2-2.
17. 張彥華, 2009, Effect of the annealing and the barrier-layer thickness on the magnetic properties in MgO-barrier-based magnetic tunnel junctions, 2009年磁性技術協會年會暨第21屆磁性技術研討會, 2009/06/24-26, 台灣磁性技術協會, 高雄中山大學, pp.TP-12.
18. 張彥華, 2009, Calculation of microwave surface impedance for the superconducting film layered structure, 25th PIERS (Progress In Electromagnetic Research Symposium), 2009/03/23-27, PIERS, 北京, pp.86.
19. 張彥華, 2008, Parameter Extraction of Equivalent Circuit Model on In0.4Ga0.6As0.8Sb0.2 Heterojunction Bipolar Transistors, 2008 International Electron Devices and Materials Symposia (IEDMS), 2008/11/28-29, 中興大學, 台中，中興大學.
20. 張彥華, 2008, A Simple Procedure to Determine Source/Drain Series Resistance and Effective Channel Length for Advanced MOSFETs, The 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008/10/20-23, IEEE Beijing Section, Peking University, 北京.
21. 張彥華, 2008, 模擬雙通道高電子遷移率電晶體於不同結構之電性分析, 2008第六屆微電子技術發展與應用研討會(2008 CMETA), 2008/05/16, 國立高雄海洋科技大學、日月光半導體, 高雄.
22. 張彥華, 2007, A Simple Method to Extract Source/Drain Series Resistance for Advanced MOSFETs, 2007 IEEE Conference on Electron Devices and Solid-State Circuits, 2007/12/20-22, 台南, IC-5.
23. 張彥華, 2007, Analysis of an EEHEMT Model for InP pHEMTs, 2007 IEEE Conference on Electron Devices and Solid-State Circuits, 2007/12/20-22, 台南, OE03.
24. 張彥華, 2007, Simulation of High Brightness on Transflective LCD with Micro Cylindrical Lens Array, The 14th International Display Workshops, 2007/12/05-07, 札幌, pp.1539-1541.
25. 張彥華, 2007, Determination of Early Effect, Self-Heating, and Avalanche Effects in InP/InGaAs/InP, 2007 International Electron Devices and Materials Symposia, 2007/11/30-2007/12/01, 新竹, 清華大學, PB7. (NSC 94-2215-E-224-010)
26. 張彥華, 2007, Perpendicular magnetic anisotropy energy constant study for various MgO thickness of tunneling junction (Co/Pd)n/MgO/(Co/Pt)n, International Symposium on Advanced Magnetic Materials and Applications, 2007/05/28-2007/06/01, 濟州島, RB07.
27. Yang-Hua Chang*, Yu-Fong Wu, and Yi-Ling Lin, 2006, Extraction of RSD and DL in Deep-Submicrometer MOSFETs, 2006 International Electron Devices and Materials Symposia (IEDMS), 2006/12/07-08, 台南, pp.352-353.
28. Yang-Hua Chang* and Yi-Ling Lin, 2006, Extraction of RSD and DL in Deep-Submicrometer MOSFETs, 8th International Conference on Solid-State and Integrated-Circuit Technology, 2006/10/23-26, 上海, pp.200-202.
29. Yang-Hua Chang, Zhi-Juan Chang, and Hui-Feng Hsu, 2005, Extraction of Early Voltage and Thermal Resistance in InP/InGaAs HBTs, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, 2005/12/19-21, Hong Kong, pp.787.
30. Ching-Sung Ho*, Juin J. Liu, Hsin-Lin Lo, Yang-Hua Chang, Cospy Chang, and Kelly Yu, 2004, Compact Modeling for Drain Current of Short-Channel MOSFETs Including Source-Drain Resistance Effect, International Conference on Solid-State & Integrated Circuits Technology, 2004/10/18-21, 北京, pp.930-934.
31. Yang-Hua Chang and Yi-Jing Hsieh, 2004, Substrate Parasitic Current in InGaP/GaAs HBTs, 2004 International Conference on Solid State Devices and Materials (SSDM), 2004/09/15-17, Tokyo, pp. 104.
32. Yang-Hua Chang and Shiuan-Ching Li, 2003, Temperature Distribution of HBTs with the Effect of Heat Sink, 2003 IEEE Conference on Electron Devices and Solid-State Circuits, 2003/12/16-18, Hong Kong, pp.375.
33. Yang-Hua Chang, Hsiao-Ching Chuang, Po-Chun Chang, and Juin-Yi Chen, 2003, AC Parameter Extraction of VBIC Model for InGaP/GaAs HBT, 2003 Asia-Pacific Microwave Conference, 2003/11/04-07, Seoul, pp. 1414.
34. Yang-Hua Chang and Hsiao-Ching Chuang, 2003, Temperature Mapping of VBIC Model for InGaP/GaAs HBTs, 2003 Asia-Pacific Microwave Conference, 2003/11/04-07, Seoul, pp. 202.
35. Yang-Hua Chang, Juin-Yi Chen, and Hsiao-Ching Chuang, 2002, Parameter Extraction of VBIC Model for InGaP/GaAs HBTs with Temperature Mapping and Substrate Parasitic Current, 2002 International Electron Devices and Materials Symposium, 2002/12/20-21, Taipei, pp. 318.
36. Yang-Hua Chang, Hsiao-Ching Chuang, Yi-Jing Hsieh, and Juin-Yi Chen, 2002, Measurement and Simulation of Substrate Current in InGap/GaAs Heterojunction Bipolar Transistors, 2002 International Electron Devices and Materials Symposium, 2002/12/20-21, Taipei, pp. 324.
37. Yang-Hua Chang, Chen-Chun Chang-Chiang, Yueh-Cheng Lee, and Chi-Chung Liu, 2002, Design of Multi-finger HBTs with a Thermal Electrical Model, 2002 IEEE Hong Kong Electron Devices Meeting, 2002/06/22, Hong Kong.
38. Yang-Hua Chang, Ching-Sung Ho, Wen-Tui Liao, and Chung-Che Liu, 2001, A Drain Current Model for MOSFETs with Pocket Implantation, 2001 IEEE Hong Kong Electron Devices Meeting, 2001/06/30, Hong Kong, pp. 42-45.
39. Yang-Hua Chang and Ying-Yih Wu, 2000, Measurement of Junction Temperature in Heterojunction Bipolar Transistors, 2000 IEEE Third International Caracas Conference on Devices,Circuits and Systems, 2000/03/15-17, Cancun.
40. Yang-Hua Chang, Ying-Yih Wu, and J. -M. Lu, 1999, Calculation of Junction Temperature in Heterojunction Bipolar Transistors, 1999 IEEE Hong Kong Electron Devices Meeting, Hong Kong, pp. 110-112.
41. Yang-Hua Chang, Yueh-Cheng Lee, and Chi-Chung Liu, 1998, Design of Power AlGaAs/GaAs HBTs with a Thermal-electrical Model, 1998 International Electron Devices and Materials Symposium, BP-3-pp. 196.
42. Yang-Hua Chang, Yueh-Cheng Lee, and Chi-Chung Liu, 1998, Design of Multi-finger AlGaAs/GaAs HBTs with Non-uniform Spacing, 1998 IEEE Hong Kong Electron Devices Meeting, Hong Kong, pp. 78-81.
43. Yang-Hua Chang, 1997, Multi-finger AlGaAs/GaAs HBTs with Non-uniform Spacing, 1997 Electron Devices and Materials Symposium, pp. 196.
44. Yang-Hua Chang and Cheng-Li Lin, 1995, A Comprehensive Study on Base Layer Design in AlGaAs/GaAs Heterojunction Bipolar Transistors, National Electron Devices and Materials Symposium.
45. Yang-Hua Chang, 1992, A Simple Sub-threshold Model for Floating Body SOI MOSFETs, 5th International Symposium on Silicon-on-Insulator Technology and Devices.
46. Yang-Hua Chang, 1991, On the Investigation of Degradation Mechanisms in Ultra-High Performance GaAs Heterojunction Bipolar Transistors, IEEE 49th Annual Device Rescarch Conference, Colorado.

1. 張彥華, 1996, AlGaAs/GaAs 異質接面電晶體在高功率應用上之設計, 行政院國科會專題研究計晝成果報告, NSC 85-2215-E-224-006. (執行期間：執行期間: 84 年 8 月 1 日至 85 年 7 月 31 日)
2. 張彥華, 1995, AlGaAs/GaAs 異質接合電晶體之模擬特性分析及製程之研究, 行政院國科會專題研究計畫成果報告.
3. Chang, Yang-Hua, 1993, Current Degradation in AlGaAs/GaAs Heterojunction Bipolar Transistors, Ph. D. Dissertation, University of California,Irvine.
4. Chang, Yang-Hua, 1993, Base Current Stability in AlGaAs/GaAs Heterojunction Bipolar Transistors, Report for the Microelectronics Innovation and Computer Research Opportunities Program, University of California.
5. Chang, Yang-Hua, 1992, The Cascaded Collector Current Formulations in AlGaAs/GaAs HBT, Report for the Microelectronics Innovation and Computer Research Opportunities Program, University of California.
6. Chang, Yang-Hua, 1991, Resolving Degradation Mechanisms in Be-doped Heterojunction Bipolar Transistors, Report for the Microelectronics Innovation and Computer Research Opportunities Program, University of California.
7. Chang, Yang-Hua, 1991, On the Investigation of Current Gain Dependence Mechanisms in AlGaAs/GaAs Heterojunction Bipolar Transistors, Master Thesis, University of California,Irvine.
8. Chang, Yang-Hua, 1990, An Investigation of Degradation in Ultra-High Performandce GaAs Heterojunction Bipolar Transistors, Report for the Microelectronics Inovation and Computer Research Opportunities Program, University of California.

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